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Samsung unveils a 512 GB DDR5 RAM module

Samsung has unveiled a new RAM module that shows the potential of DDR5 memory in terms of speed and capacity. The 512GB DDR5 module is the first to use High-K Metal Gate (HKMG) technology, delivering 7,200 Mbps speeds – more than double DDR4, Samsung said. Right now it’s aimed at computer-hungry supercomputers, AI and machine learning features, but DDR5 will eventually find its way to regular PCs, increasing gaming and other applications.

Samsung first used HKMG technology in 2018 with GDDR6 chips used in GPUs. Developed by Intel, it uses hafnium instead of silicon, with metals replacing the standard polysilicon gate electrodes. All this results in higher chip density, while reducing power leakage.

Each chip uses eight layers of 1

6 GB DRAM chips for a capacity of 128 GB or 16 GB. As such, Samsung will need 32 of them to make a 512 GB RAM module. On top of the higher speeds and capacity, Samsung said that the chip uses 13 percent less power than non-HKMG modules – ideal for data centers, but not too bad for ordinary PCs.

With 7200 Mbps speeds, Samsung’s latest module would deliver around 57.6 GB / s transfer speeds on a single channel. In Samsung’s press release, Intel noted that the memory would be compatible with the next generation “Sapphire Rapids” Xeon scalable processors. That architecture will use an eight-channel DDR5 memory controller, so we can see multi-byte memory configurations with memory transfer speeds as high as 460 GB / s. Meanwhile, the first consumer PCs may arrive in 2022 when AMD unveils its Zen 4 platform , which is rumored to support DDR5.

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