512 GB DDR5 module with capacity enabled by an 8-layer TSV structure
HKMG material reduces power by 13 percent while doubling the speed of DDR4
Samsung Electronics, a world leader in advanced memory technology, announced today that it has expanded its DDR5 DRAM memory portfolio with the industry’s first 512 GB DDR5 module based on High-K Metal Gate (HKMG) processing technology. The new DDR5, which delivers more than twice the performance of DDR4 at up to 7200 megabits per second (Mbps), will be able to orchestrate the most extreme computer-hungry, high-bandwidth workloads in supercomputing, artificial intelligence (AI) and machine learning (ML), as well as data analysis applications.
“Samsung is the only semiconductor company with logic and memory features and the expertise to incorporate HKMG̵
“As the amount of data to be moved, stored and processed exponentially increases, the transition to DDR5 comes at a critical turning point for data centers, networks and edge distributions in the cloud,” said Carolyn Duran, vice president and GM of Memory and IO Technology at Intel. “Intel’s engineering team works closely with memory managers like Samsung to deliver fast, power-efficient DDR5 memory that is performance-optimized and compatible with our upcoming Intel Xeon scalable processors, codenamed Sapphire Rapids.”
Samsung’s DDR5 will use highly advanced HKMG technology that has traditionally been used in logic semiconductors. With the continued downscaling of DRAM structures, the insulation layer has thinned, leading to a higher leakage current. By replacing the insulator with HKMG material, Samsung’s DDR5 will be able to reduce leakage and reach new heights in performance. This new memory will also use approximately 13% less power, making it particularly suitable for data centers where energy efficiency is becoming increasingly important.
The HKMG process was adopted in Samsung’s GDDR6 memory in 2018 for the first time in the industry. By expanding its use in DDR5, Samsung is further strengthening its leadership in next-generation DRAM technology.
Samsung’s DDR5 has eight layers of 16 GB DRAM chips to offer the largest capacity of 512 GB, by utilizing through-silicon via (TSV) technology. TSV was first used in DRAM in 2014 when Samsung introduced server modules with a capacity of up to 256 GB.
Samsung is currently sampling different variants of the DDR5 memory product family to customers for verification and finally certification with its leading products to accelerate AI / ML, exhaust scale calculation, analysis, networking and other data-intensive workloads.