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Samsung develops DDR5 memory modules with 512 GB capacity, up to 7200 Mb / s



Samsung has announced the development of the industry’s first DDR5 memory module, which has an insane 512 GB capacity. The memory modules are targeted at AI / ML, exascale hyper-data processing, analysis, networking and other data-intensive workloads.

Samsung DDR5 memory modules pack with 512 GB capacity – based on HKMG process node and offer up to 7200 Mb / s pin speeds

Samsung states that 512 GB DDR5 memory modules will expand its existing portfolio to offer the densest capacity ever produced. The memory modules will have the HKMG or High-K Metal Gate process node which was also used by Samsung for the production of the GDDR6 VRAM modules. The process node allows the memory modules to use 13% lower power and also reduces power leaks.

DDR5-4800 MHz memory tested with Intel’s 8 Core Alder Lake Desktop CPU platform, up to 112% faster than DDR4

In terms of specifications, Samsung 512 GB DDR5 memory offers twice the performance of DDR4 memory at speeds up to 7200 Mb / s. The memory has a total of 40 DRAM chips with each DRAM chip containing eight layers of 16 Gb DRAM. modules stacked together and connected to TSVs (Through-Silicon-Via).

512 GB DDR5 module with capacity enabled by an 8-layer TSV structure
HKMG material reduces power by 13 percent while doubling the speed of DDR4

Samsung Electronics, a world leader in advanced memory technology, announced today that it has expanded its DDR5 DRAM memory portfolio with the industry’s first 512 GB DDR5 module based on High-K Metal Gate (HKMG) processing technology. The new DDR5, which delivers more than twice the performance of DDR4 at up to 7200 megabits per second (Mbps), will be able to orchestrate the most extreme computer-hungry, high-bandwidth workloads in supercomputing, artificial intelligence (AI) and machine learning (ML), as well as data analysis applications.

“Samsung is the only semiconductor company with logic and memory features and the expertise to incorporate HKMG’s groundbreaking logic technology into memory product development,” said Young-Soo Sohn, Vice President of DRAM Memory Planning / Enabling Group at Samsung Electronics. “By bringing this type of process innovation to DRAM production, we are able to offer our customers high-efficiency, yet energy-efficient memory solutions for operating computers needed for medical research, financial markets, autonomous driving, smart cities and more.”

“As the amount of data to be moved, stored and processed exponentially increases, the transition to DDR5 comes at a critical turning point for data centers, networks and edge distributions in the cloud,” said Carolyn Duran, vice president and GM of Memory and IO Technology at Intel. “Intel’s engineering team works closely with memory managers like Samsung to deliver fast, power-efficient DDR5 memory that is performance-optimized and compatible with our upcoming Intel Xeon scalable processors, codenamed Sapphire Rapids.”

Samsung’s DDR5 will use highly advanced HKMG technology that has traditionally been used in logic semiconductors. With the continued downscaling of DRAM structures, the insulation layer has thinned, leading to a higher leakage current. By replacing the insulator with HKMG material, Samsung’s DDR5 will be able to reduce leakage and reach new heights in performance. This new memory will also use approximately 13% less power, making it particularly suitable for data centers where energy efficiency is becoming increasingly important.

The HKMG process was adopted in Samsung’s GDDR6 memory in 2018 for the first time in the industry. By expanding its use in DDR5, Samsung is further strengthening its leadership in next-generation DRAM technology.

Samsung’s DDR5 has eight layers of 16 GB DRAM chips to offer the largest capacity of 512 GB, by utilizing through-silicon via (TSV) technology. TSV was first used in DRAM in 2014 when Samsung introduced server modules with a capacity of up to 256 GB.

Samsung is currently sampling different variants of the DDR5 memory product family to customers for verification and finally certification with its leading products to accelerate AI / ML, exhaust scale calculation, analysis, networking and other data-intensive workloads.

Samsung only states that they are currently sampling different variants of DDR5 memory, but does not provide a release date. We can expect a launch by the end of the year when DDR5 memory platforms from Intel and AMD start to hit shelves, and we can also expect some really high prices for memory modules with so much capacity.




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