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Samsung announces 512 GB DDR5 memory which is twice as fast as DDR4



Samsung DDR5 modules
As we get closer to Intel’s Alder Lake and AMD’s Zen 4 architectures (late this year and / or early next year, with no delays), memory manufacturers have begun announcing advances in DDR5 memory, which will result in a large increase in bandwidth. We’ve even seen some DDR5 module launches. However, Samsung has managed to differentiate itself from the package by announcing what they say is the industry’s first 512 GB memory module based on high-k metal gate (HKMG) processing technology.
You may have heard of HKMG before, since it has been around for a long time – Intel first supplied HKMG transistors in 2007 with its 45-nanometer logic technology (Penryn), which combined a hafnium-based dialectical layer (instead of silicon dioxide) with a gate electrode made of new metals to combat door leakage, a phenomenon that occurs through a process called quantum mechanical tunneling.
HKMG has traditionally been used in semiconductor designs (Samsung also adopted it in the GDDR6 memory in 2018), but as DRAM structures have continued to shrink, the insulation layer has thinned, resulting in higher leakage current. So Samsung replaced the insulator with HKMG material. By doing this, the company says they have been able to reduce leakage and achieve a new level of DDR5 performance, while consuming 13 percent less power – a boon for data centers where every little power saving matters.
Samsung DDR5 module

According to Samsung, the 512 GB DDR5 memory module delivers more than twice the performance of DDR4, with up to 7,200 megabits per second (Mbps). This, the company says, will be beneficial for the most extreme work speeds with computing and high bandwidth.

“Samsung is the only semiconductor company with logic and memory properties and the expertise to incorporate HKMG’s groundbreaking logic technology into memory product development,” said Young-Soo Sohn, Vice President of DRAM Memory Planning / Enabling Group at Samsung Electronics. “By bringing this type of process innovation to DRAM production, we are able to offer our customers high-efficiency, yet energy-efficient memory solutions for operating computers needed for medical research, financial markets, autonomous driving, smart cities and more.”

Samsung DDR5 module

Of course, we are all excited about what DDR5 can deliver on the consumer side, with upcoming platforms from both AMD and Intel. In this case, however, Samsung is targeting data center environments and other professional segments, to handle advanced workloads in supercomputers, artificial intelligence (AI), machine learning (ML), data analysis and so on.

The 512 GB capacity comes by stacking eight layers of 16-gigabit (Gb) DRAM chips. There is no mention of the cost, although Samsung says it is currently testing its 512 GB modules for customers for testing and verification.


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