According to Samsung, the 512 GB DDR5 memory module delivers more than twice the performance of DDR4, with up to 7,200 megabits per second (Mbps). This, the company says, will be beneficial for the most extreme work speeds with computing and high bandwidth.
“Samsung is the only semiconductor company with logic and memory properties and the expertise to incorporate HKMG’s groundbreaking logic technology into memory product development,” said Young-Soo Sohn, Vice President of DRAM Memory Planning / Enabling Group at Samsung Electronics. “By bringing this type of process innovation to DRAM production, we are able to offer our customers high-efficiency, yet energy-efficient memory solutions for operating computers needed for medical research, financial markets, autonomous driving, smart cities and more.”
Of course, we are all excited about what DDR5 can deliver on the consumer side, with upcoming platforms from both AMD and Intel. In this case, however, Samsung is targeting data center environments and other professional segments, to handle advanced workloads in supercomputers, artificial intelligence (AI), machine learning (ML), data analysis and so on.
The 512 GB capacity comes by stacking eight layers of 16-gigabit (Gb) DRAM chips. There is no mention of the cost, although Samsung says it is currently testing its 512 GB modules for customers for testing and verification.